| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 15.0 A |
| Case/Package | DPAK-252 |
| Power Dissipation | 79 W |
| Part Family | IRLR3410 |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 17.0 A |
| Rise Time | 53.0 ns |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
HEXFET® Power MOSFET Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Logic Level Gate Drive Ultra Low On-Resistance Surface Mount (IRLR3410) Straight Lead (IRLU3410) Advanced Process Technology Fast Switching Fully Avalanche Rated
International Rectifier
11 Pages / 0.16 MByte
International Rectifier
11 Pages / 0.28 MByte
International Rectifier
Trans MOSFET N-CH 100V 17A 3Pin(2+Tab) DPAK
International Rectifier
Trans MOSFET N-CH 100V 17A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ω; ID 17A; D-Pak (TO-252AA); PD 79W
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ω; ID 17A; D-Pak (TO-252AA); PD 79W
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ω; ID 17A; D-Pak (TO-252AA); PD 79W
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