TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | TO-252-3 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 3.3 mΩ |
Polarity | N-CH |
Power Dissipation | 140 W |
Threshold Voltage | 2.3 V |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Continuous Drain Current (Ids) | 161A |
Rise Time | 42 ns |
Input Capacitance (Ciss) | 4380pF @15V(Vds) |
Fall Time | 19 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 140W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 6.22 mm |
Size-Height | 2.3 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 30V 161A (Tc) 140W (Tc) Surface Mount D-Pak
Infineon
11 Pages / 0.35 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
1 Pages / 0.06 MByte
International Rectifier
Trans MOSFET N-CH 30V 161A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 2.6Milliohms; ID 161A; D-Pak (TO-252AA); VF 1V
International Rectifier
Trans MOSFET N-CH 30V 161A 3Pin(2+Tab) DPAK T/R
International Rectifier
Trans MOSFET N-CH 30V 161A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 2.6Milliohms; ID 161A; D-Pak (TO-252AA); VF 1V
International Rectifier
MOSFET N-CH 30V 161A DPAK
International Rectifier
MOSFET N-CH 30V 161A DPAK
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