| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 63 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0042 Ω |
| Polarity | N-Channel |
| Power Dissipation | 63 W |
| Threshold Voltage | 1.8 V |
| Drain to Source Voltage (Vds) | 25 V |
| Continuous Drain Current (Ids) | 81A |
| Rise Time | 46 ns |
| Input Capacitance (Ciss) | 1470pF @13V(Vds) |
| Input Power (Max) | 63 W |
| Fall Time | 8.5 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 63W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLR8256PBF is a HEXFET® single N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency synchronous buck converters and high frequency isolated DC-to-DC converters with synchronous rectification for telecom use.
● Ultra-low gate impedance
● Very low RDS (ON) at 4.5V VGS
● Logic level
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