| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 79 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.093 Ω |
| Polarity | P-Channel |
| Power Dissipation | 79 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 20A |
| Rise Time | 24 ns |
| Input Capacitance (Ciss) | 660pF @50V(Vds) |
| Fall Time | 9.5 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 79W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
The IRLR9343PBF is a HEXFET® single P-channel MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device.
● Advanced process technology
● Low RDS (ON) for improved efficiency
● Low Qg and Qsw for better THD and improved efficiency
● Low QRR for better THD and lower EMI
● Repetitive avalanche capability for robustness and reliability
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