| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 7 Pin |
| Case/Package | TO-263-7 |
| Power Rating | 370 W |
| Number of Positions | 7 Position |
| Drain to Source Resistance (on) (Rds) | 0.0032 Ω |
| Polarity | N-Channel |
| Power Dissipation | 370 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 190A |
| Rise Time | 160 ns |
| Input Capacitance (Ciss) | 11490pF @50V(Vds) |
| Fall Time | 87 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 370W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Height | 4.55 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLS4030-7PPBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is optimized for logic level drive. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
● Very low RDS (ON) at 4.5V VGS
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and di/dt capability
● Logic level
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