| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 7.70 A |
| Case/Package | TO-251 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.2 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2 V |
| Input Capacitance | 400pF @25V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Continuous Drain Current (Ids) | 7.70 A |
| Rise Time | 110 ns |
| Input Capacitance (Ciss) | 400pF @25V(Vds) |
| Fall Time | 26 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 2.39 mm |
| Size-Height | 6.22 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Vishay Semiconductor
8 Pages / 2.11 MByte
Vishay Semiconductor
11 Pages / 0.77 MByte
Vishay Semiconductor
2 Pages / 0.04 MByte
VISHAY
TO-251-3 N-CH 60V 7.7A 200mΩ
Vishay Siliconix
MOSFET N-CH 60V 7.7A I-PAK
Vishay Semiconductor
Trans MOSFET N-CH 60V 7.7A 3Pin(3+Tab) IPAK
Vishay Intertechnology
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
Samsung
Power Field-Effect Transistor, 6.7A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
VISHAY
TO-251-3 N-CH 60V 7.7A 200mΩ
Vishay Siliconix
MOSFET N-CH 60V 7.7A I-PAK
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 0.2Ω; ID 7.7A; TO-251AA; PD 2.5W; VGS +/-10V
International Rectifier
Trans MOSFET N-CH 55V 10A 3Pin(3+Tab) IPAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
