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IRLU120NPBF
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IRLU120NPBF Datasheet PDF (11 Pages)
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IRLU120NPBF Specifications

IRLU120NPBF Size & Package

IRLU120NPBF Documents

International Rectifier
11 Pages / 0.17 MByte
International Rectifier
11 Pages / 0.28 MByte

IRLU120 Documents

Vishay Intertechnology
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
Vishay Siliconix
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3
Samsung
Power Field-Effect Transistor, 7.9A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
Infineon
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3
International Rectifier
(IRLR120 / IRLU120) HEXFET Power MOSFET
VISHAY
IPAK N-CH 100V 7.7A
Fairchild
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3
Vishay Semiconductor
POWER MOSFET
Infineon
IPAK N-CH 100V 10A
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.185Ω; ID 10A; I-Pak (TO-251AA); PD 48W
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