TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 55.0 V |
Current Rating | 18.0 A |
Case/Package | TO-220 |
Drain to Source Resistance (on) (Rds) | 60 mΩ |
Polarity | N-Channel |
Power Dissipation | 45 W |
Part Family | IRLZ24N |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | 55.0V (min) |
Continuous Drain Current (Ids) | 18.0 A |
Rise Time | 74.0 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Operating Temperature | -55℃ ~ 175℃ |
International Rectifier
9 Pages / 0.19 MByte
International Rectifier
9 Pages / 0.17 MByte
Vishay Siliconix
MOSFET N-CH 60V 17A TO-220AB
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Semiconductor
Trans MOSFET N-CH 60V 17A 3Pin(3+Tab) TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD-220, 3 PIN
Infineon
Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
Samsung
Power Field-Effect Transistor, 14A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Vishay Precision Group
60V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB
TI
17A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.