TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.05 Ω |
Polarity | N-Channel |
Power Dissipation | 88 W |
Threshold Voltage | 2 V |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 30.0 A |
Operating Temperature (Max) | 175 ℃ |
TYPE | DESCRIPTION |
---|
Packaging | Tube |
Vishay Semiconductor
9 Pages / 1.56 MByte
Vishay Semiconductor
20 Pages / 2.6 MByte
VISHAY
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220AB
International Rectifier
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Vishay Siliconix
MOSFET N-CH 60V 30A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 60V 30A 3Pin(3+Tab) TO-220AB
Philips
N-channel enhancement mode Logic level TrenchMOS transistor
Infineon
Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
26A, 60V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NXP
30A, 55V, 0.046ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Vishay Intertechnology
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Samsung
Power Field-Effect Transistor, 25A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.