TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.022 Ω |
Polarity | N-Channel |
Power Dissipation | 83 W |
Threshold Voltage | 2 V |
Input Capacitance | 1700 pF |
Drain to Source Voltage (Vds) | 55 V |
Breakdown Voltage (Drain to Source) | 55 V |
Continuous Drain Current (Ids) | 47A |
Rise Time | 84 ns |
Input Capacitance (Ciss) | 1700pF @25V(Vds) |
Input Power (Max) | 110 W |
Fall Time | 15 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.54 mm |
Size-Height | 8.77 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLZ44NPBF is a 55V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.
● 175°C Operating temperature
● Dynamic dV/dt rating
● Fully avalanche rated
● Logic level gate drive
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