TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-263-3 |
Drain to Source Resistance (on) (Rds) | 28 mΩ |
Polarity | N-Channel |
Power Dissipation | 3.7 W |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 50.0 A |
Rise Time | 230 ns |
Input Capacitance (Ciss) | 3300pF @25V(Vds) |
Input Power (Max) | 3.7 W |
Fall Time | 110 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 3700 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Minimum Packing Quantity | 2000 |
IRLZ44S Series N-Channel 60 V 28 mOhm 3.7 W Power Mosfet - D2PAK (TO-263)
VISHAY
9 Pages / 0.42 MByte
VISHAY
9 Pages / 0.42 MByte
International Rectifier
MOSFET N-CH 60V 50A TO-220AB
Vishay Siliconix
MOSFET N-CH 60V 50A TO-220AB
Samsung
N-CHANNEL LOGIC LEVEL MOSFET
Vishay Intertechnology
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Vishay Semiconductor
Trans MOSFET N-CH 60V 50A 3Pin(3+Tab) TO-220AB
Fairchild
Power Field-Effect Transistor, 35A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Infineon
Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
50A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.