| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 80 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0135 Ω |
| Polarity | N-Channel |
| Power Dissipation | 80 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 55 V |
| Continuous Drain Current (Ids) | 51A |
| Rise Time | 160 ns |
| Input Capacitance (Ciss) | 1620pF @25V(Vds) |
| Fall Time | 42 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 80W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Height | 8.77 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Industry-leading quality
● Fast Switching
● 175°C Operating Temperature
● Logic Level
Infineon
12 Pages / 0.37 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.04 MByte
Infineon
1 Pages / 0.14 MByte
International Rectifier
MOSFET N-CH 60V 50A TO-220AB
Vishay Siliconix
MOSFET N-CH 60V 50A TO-220AB
Samsung
N-CHANNEL LOGIC LEVEL MOSFET
Vishay Intertechnology
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Vishay Semiconductor
Trans MOSFET N-CH 60V 50A 3Pin(3+Tab) TO-220AB
Fairchild
Power Field-Effect Transistor, 35A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Infineon
Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
TI
50A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
