| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 625 mW |
| Rise/Fall Time | 120ns, 50ns |
| Number of Outputs | 2 Output |
| Output Voltage | 600 V |
| Output Current | 180.260 mA |
| Number of Channels | 2 Channel |
| Power Dissipation | 625 mW |
| Fall Time (Max) | 80 ns |
| Fall Time (Max) | 220 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 625 mW |
| Supply Voltage | 10V ~ 15.4V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -40℃ ~ 125℃ (TJ) |
Summary of Features:
● Integrated 600 V half-bridge gate driver
● CT, RT programmable oscillator
● 15.4 V Zener clamp on VCC
● Micropower startup
● Non-latched shutdown on CT pin (1/6th VCC)
● Internal bootstrap FET
● +/- 50 V/ns dV/dt immunity
● Internal deadtime
● Typical deadtime 1.1 µs (IRS2153D) or 0.6 µs (IRS21531D)
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MOSFET DRVR 600V 0.26A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin PDIP Tube
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MOSFET DRVR 600V 0.26A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC T/R
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MOSFET DRVR 600V 0.26A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC Tube
Infineon
MOSFET DRVR 600V 0.26A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin PDIP Tube
Infineon
MOSFET DRVR 600V 0.26A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC Tube
Infineon
MOSFET DRVR 600V 0.26A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC T/R
International Rectifier
Driver 600V 0.26A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin PDIP Tube
International Rectifier
Driver 600V 0.26A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC T/R
International Rectifier
Driver 600V 0.26A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SOIC T/R
International Rectifier
Driver 600V 0.26A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin PDIP Tube
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