| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 10.0V (min) |
| Case/Package | SOIC-8 |
| Power Rating | 625 mW |
| Rise/Fall Time | 40ns, 20ns |
| Number of Outputs | 2 Output |
| Output Voltage | 600 V |
| Output Current | 1.9.2.3 A |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Power Dissipation | 625 mW |
| Fall Time (Max) | 35 ns |
| Fall Time (Max) | 60 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 625 mW |
| Supply Voltage | 10V ~ 20V |
| Supply Voltage (Max) | 20 V |
| Supply Voltage (Min) | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IRS2183SPBF is a high voltage high speed power MOSFET and IGBT Half-bridge Driver with dependent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
● Floating channel designed for bootstrap operation
● Tolerant to negative transient voltage (dV/dt immune)
● Under-voltage lockout for both channels
● 3.3 and 5V Input logic compatible
● Matched propagation delay for both channels
● Logic and power ground ±5V offset
● Lower di/dt gate driver for better noise immunity
Infineon
24 Pages / 1.26 MByte
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48 Pages / 7.29 MByte
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73 Pages / 2.93 MByte
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30 Pages / 0.41 MByte
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8 Pages / 0.12 MByte
International Rectifier
Half Bridge Driver, SoftTurn-On, Low Side Inverting Input, Separate High and Low Side Input, 400ns Deadtime in a 8-Lead package
Infineon
600V Half Bridge Driver IC with typical 1.9A source and 2.3A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC, and 14 Lead PDIP.
Infineon
600V Half Bridge Driver IC with typical 1.9A source and 2.3A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.
Infineon
600V Half Bridge Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP.
Infineon
600V Half Bridge Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead SOIC package for IGBTs and MOSFETs. Also available in 14Lead PDIP, 8 Lead SOIC, and 8 Lead PDIP.
Infineon
600V Half Bridge Driver IC with typical 1.9A source and 2.3A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC, 14 Lead SOIC, and 14 Lead PDIP.
Infineon
600V Half Bridge Driver IC with typical 1.9A source and 2.3A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP, 14 Lead SOIC, and 14 Lead PDIP.
Infineon
600V Half Bridge Driver IC with typical 1.9A source and 2.3A sink currents in 14 Lead PDIP package for IGBTs and MOSFETs. Also available in 14 Lead SOIC, 8 Lead SOIC, and 8 Lead PDIP.
International Rectifier
MOSFET DRVR 600V 2.3A 2Out Hi/Lo Side Half Brdg Non-Inv 8Pin PDIP Tube
International Rectifier
Driver 600V 2.3A 2Out Hi/Lo Side Half Brdg Non-Inv 14Pin SOIC N T/R
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