| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 44 Pin |
| Supply Voltage (DC) | 3.30 V, 3.60 V (max) |
| Case/Package | TSOP-44 |
| Number of Positions | 44 Position |
| Number of Bits | 8 Bit |
| Access Time | 10 ns |
| Memory Size | 2000000 B |
| Access Time(Max) | 10 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 2.4V ~ 3.6V |
| Supply Voltage (Max) | 3.6 V |
| Supply Voltage (Min) | 2.4 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Operating Temperature | -40℃ ~ 85℃ |
The IS61WV20488BLL-10TLI is a 2M x 8-bit high-speed low power CMOS Static Random Access Memory (SRAM) fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. It operates from a single power supply and all inputs are TTL-compatible.
● High-speed access time - 10ns
● High-performance, low-power CMOS process
● Multiple center power and ground pins for greater noise immunity
● Easy memory expansion with CE and OE
● CE Power-down
● Fully static operation - no clock or refresh required
Integrated Silicon Solution(ISSI)
21 Pages / 0.29 MByte
Integrated Silicon Solution(ISSI)
2 Pages / 0.04 MByte
Integrated Silicon Solution(ISSI)
20 Pages / 0.33 MByte
Integrated Silicon Solution(ISSI)
SRAM, 16Mbit, 2M x 8Bit, 2.4V to 3.6V, TSOP-II, 44Pins, 10ns
Integrated Silicon Solution(ISSI)
INTEGRATED SILICON SOLUTION (ISSI) IS61WV20488BLL-10MLI SRAM, 16Mbit, 2M x 8Bit, 2.4V to 3.6V, Mini BGA, 48Pins, 10ns
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 16M-Bit 2M x 8 10ns 44Pin TSOP-II T/R
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 16M-Bit 2M x 8 10ns 48Pin Mini-BGA T/R
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