| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 48 Pin |
| Case/Package | BGA-48 |
| Supply Current | 45 mA |
| Number of Positions | 48 Position |
| Number of Bits | 16 Bit |
| Access Time | 10 ns |
| Access Time(Max) | 10 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 2.4V ~ 3.6V |
| Supply Voltage (Max) | 3.6 V |
| Supply Voltage (Min) | 2.4 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Size-Length | 8.1 mm |
| Size-Width | 6.1 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | -40℃ ~ 85℃ |
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 48-miniBGA (6x8)
Integrated Silicon Solution(ISSI)
21 Pages / 0.2 MByte
Integrated Silicon Solution(ISSI)
2 Pages / 0.04 MByte
Integrated Silicon Solution(ISSI)
17 Pages / 0.77 MByte
Integrated Silicon Solution(ISSI)
4Mb, High-Speed/Low Power, Async, 256K x 16, 8ns/3.3V, or 10ns/2.4V-3.6V, 44Pin TSOP II, RoHS
Integrated Silicon Solution(ISSI)
4Mb, High-Speed/Low Power, Async, 256K x 16, 8ns/3.3V, or 10ns/2.4V-3.6V, 48 Ball mBGA (6x8 mm), RoHS
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 10ns 44Pin TSOP-II
Integrated Silicon Solution(ISSI)
4Mb, High-Speed/Low Power, Async, 256K x 16, 8ns/3.3V, or 10ns/2.4V-3.6V, 44Pin TSOP II, Leadfree
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 4M-bit 256K x 16 10ns 44Pin TSOP-II T/R
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 256K x 16 10ns 48Pin Mini-BGA T/R
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 256K x 16 10ns 48Pin Mini-BGA
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 256K x 16 10ns 44Pin SOJ
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 256K x 16 10ns 44Pin SOJ T/R
Integrated Silicon Solution(ISSI)
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