TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 36 Pin |
Case/Package | TFBGA-36 |
Access Time | 10 ns |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | 40 ℃ |
Supply Voltage | 2.4V ~ 3.6V |
Supply Voltage (Max) | 3.6 V |
Supply Voltage (Min) | 2.4 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tape & Reel (TR) |
Operating Temperature | -40℃ ~ 85℃ (TA) |
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-TFBGA (6x8)
Integrated Silicon Solution(ISSI)
25 Pages / 0.53 MByte
Integrated Silicon Solution(ISSI)
20 Pages / 0.84 MByte
Integrated Silicon Solution(ISSI)
4Mb, High-Speed/Low Power, Async, 512K x 8, 8ns/3.3V, or 10ns, 2.4V-3.6V, 44Pin TSOP II, RoHS
Integrated Silicon Solution(ISSI)
4Mb, High-Speed/Low Power, Async, 512K x 8, 8ns/3.3V, or 10ns/2.4V-3.6V, 36 Ball mBGA (8x10 mm), RoHS
Integrated Silicon Solution(ISSI)
4Mb,High-Speed/Low Power,Async,512K X 8,8ns/3.3V,or 10ns,2.4V-3.6V,36Pin SOJ (400mil), Leadfree
Integrated Silicon Solution(ISSI)
4Mb,High-Speed/Low Power,Async,512K X 8,8ns/3.3V,or 10ns,2.4V-3.6V,44Pin TSOP II, Leadfree
Integrated Silicon Solution(ISSI)
Standard SRAM, 512KX8, 10ns, CMOS, PDSO44, LEAD FREE, PLASTIC, TSOP2-44
Integrated Silicon Solution(ISSI)
4Mb,High-Speed/Low Power,Async,512K X 8,8ns/3.3V,or 10ns,2.4V-3.6V,36 Ball MBGA (8x10 Mm)
Integrated Silicon Solution(ISSI)
4Mb,High-Speed/Low Power,Async,512K X 8,8ns/3.3V,or 10ns,2.4V-3.6V,36Pin SOJ (400mil), Leadfree
Integrated Silicon Solution(ISSI)
4Mb,High-Speed/Low Power,Async,512K X 8,8ns/3.3V,or 10ns,2.4V-3.6V,36 Ball MBGA (8x10 Mm), Leadfree
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 2.5V/3.3V 4M-Bit 512K x 8 10ns 36Pin TFBGA T/R
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