IS62WV25616BLL-55T Datasheet PDF - Integrated Silicon Solution(ISSI)

DESCRIPTION

●TheISSIIS62WV25616ALL/IS62WV25616BLL are high speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices.

●FEATURES

●• High-speed access time: 55ns, 70ns

●• CMOS low power operation

●   36 mW (typical) operating

●   9 µW (typical) CMOS standby

●• TTL compatible interface levels

●• Single power supply

●   1.65V--2.2V VDD (IS62WV25616ALL)

●   2.5V--3.6V VDD (IS62WV25616BLL)

●• Fully static operation: no clock or refresh required

●• Three state outputs

●• Data control for upper and lower bytes

●• Industrial temperature available

●• Lead-free available