| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 48 Pin |
| Supply Voltage (DC) | 3.30 V, 3.60 V (max) |
| Case/Package | BGA-48 |
| Number of Bits | 16 Bit |
| Access Time | 55 ns |
| Memory Size | 8000000 B |
| Access Time(Max) | 55 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 2.5V ~ 3.6V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -40℃ ~ 85℃ (TA) |
SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 55ns 48-miniBGA (7.2x8.7)
Integrated Silicon Solution(ISSI)
16 Pages / 0.18 MByte
Integrated Silicon Solution(ISSI)
2 Pages / 0.04 MByte
Integrated Silicon Solution(ISSI)
16 Pages / 0.52 MByte
Integrated Silicon Solution(ISSI)
INTEGRATED SILICON SOLUTION (ISSI) IS62WV51216BLL-55TLI IC, SRAM, 8Mbit, 512K x 16Bit, 55ns Access Time, TTL Interface, 2.5V to 3.6V supply, TSOP-II-44
Integrated Silicon Solution(ISSI)
ISSI IS62WV51216BLL-55BLI SRAM Memory, 8Mbit, 2.5 → 3.6V, 55ns 48Pin BGA
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 44Pin TSOP-II T/R
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48Pin Mini-BGA
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48Pin Mini-BGA T/R
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 3V 8M-Bit 512K x 16 55ns 44Pin TSOP-II
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48Pin mBGA T/R
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 44Pin TSOP-II
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