| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 44 Pin |
| Supply Voltage (DC) | 3.30 V, 3.60 V (max) |
| Operating Voltage | 3.3 V |
| Case/Package | TSOP-44 |
| Number of Positions | 44 Position |
| Number of Bits | 16 Bit |
| Access Time | 55 ns |
| Memory Size | 1000000 B |
| Access Time(Max) | 55 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 2.5V ~ 3.6V |
| Supply Voltage (Max) | 3.6 V |
| Supply Voltage (Min) | 2.5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Each |
| Size-Length | 18.52 mm |
| Size-Width | 10.29 mm |
| Size-Height | 1.05 mm |
| Operating Temperature | -40℃ ~ 85℃ |
The IS62WV51216BLL-55TLI is a 8Mb high speed static RAM organized as 512K words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
● 36mW Typical operating, 12µW (typical) CMOS standby CMOS low power operation
● TTL compatible interface levels
● Fully static operation, no clock or refresh required
● Three state outputs
● Data control for upper and lower bytes
Integrated Silicon Solution(ISSI)
16 Pages / 0.18 MByte
Integrated Silicon Solution(ISSI)
2 Pages / 0.04 MByte
Integrated Silicon Solution(ISSI)
16 Pages / 0.52 MByte
Integrated Silicon Solution(ISSI)
16 Pages / 0.12 MByte
Integrated Silicon Solution(ISSI)
INTEGRATED SILICON SOLUTION (ISSI) IS62WV51216BLL-55TLI IC, SRAM, 8Mbit, 512K x 16Bit, 55ns Access Time, TTL Interface, 2.5V to 3.6V supply, TSOP-II-44
Integrated Silicon Solution(ISSI)
ISSI IS62WV51216BLL-55BLI SRAM Memory, 8Mbit, 2.5 → 3.6V, 55ns 48Pin BGA
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 44Pin TSOP-II T/R
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48Pin Mini-BGA
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48Pin Mini-BGA T/R
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 3V 8M-Bit 512K x 16 55ns 44Pin TSOP-II
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 48Pin mBGA T/R
Integrated Silicon Solution(ISSI)
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 44Pin TSOP-II
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