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ISO5852S-EP Datasheet PDF
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ISO5852S-EP Datasheet PDF (42 Pages)
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ISO5852S-EP Environmental
ISO5852S-EP Function Overview
The ISO5852S-EP device is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15-V to maximum 30-V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.
●An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 µs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, VEE2, the gate-driver output is pulled hard to the VEE2 potential which turns the IGBT immediately off.
●When desaturation is active, a fault signal is sent across the isolation barrier pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.
●When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to VEE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.
●The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.
●The ISO5852S-EP device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –55°C to +125°C ambient.
● 100-kV/μs Minimum Common-Mode Transient Immunity (CMTI) at VCM = 1500 V
● Split Outputs to Provide 2.5-A Peak Source and 5-A Peak Sink Currents
● Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
● 2-A Active Miller Clamp
● Output Short-Circuit Clamp
● Soft Turn-Off (STO) during Short Circuit
● Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
● Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
● Active Output Pulldown and Default Low Outputs with Low Supply or Floating Inputs
● 2.25-V to 5.5-V Input Supply Voltage
● 15-V to 30-V Output Driver Supply Voltage
● CMOS Compatible Inputs
● Rejects Input Pulses and Noise Transients Shorter Than 20 ns
● Operating Temperature: –55°C to +125°C Ambient
● Surge Immunity 12800-VPK (according to IEC 61000-4-5)
● Safety-Related Certifications:
● 8000-VPK VIOTM and 2121-VPK VIORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
● 5700-VRMS Isolation for 1 Minute per UL 1577
● CSA Component Acceptance Notice 5A, IEC 60950-1, IEC 60601-1 and IEC 61010-1 End Equipment Standards
● CQC Certification per GB4943.1-2011
● All Certifications Complete per UL, VDE, CQC, TUV and Planned for CSA
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ISO5852 Documents
TI
High-CMTI 2.5A/5A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Protection Features 16-SOIC -40℃ to 125℃
TI
TEXAS INSTRUMENTS ISO5852SEVM Evaluation Board, IGBT Gate Driver, 2.5A Source/5A Sink
TI
High-CMTI 2.5A/5A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Protection Features 16-SOIC -40℃ to 125℃
TI
High-CMTI 2.5A/5A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Protection Features
TI
5.7 kVrms Split O/P, Reinforced Isolated IGBT Gate Driver 16-SOIC -40℃ to 125℃o
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