TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 16 Pin |
Supply Voltage (DC) | 3.30 V, 5.00 V |
Case/Package | SOIC-16 |
Rise/Fall Time | 2 ns |
Supply Current | 7.00 mA |
Number of Channels | 4 Channel |
Number of Positions | 16 Position |
Power Dissipation | 220 mW |
Data Rate | 25.0 Mbps |
Isolation Voltage | 2500 Vrms |
Thermal Shutdown | No |
Fall Time (Max) | 2 ns |
Fall Time (Max) | 2 ns |
Operating Temperature (Max) | 125 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 220 mW |
Supply Voltage | 3.15V ~ 5.5V |
Supply Voltage (Max) | 5.5 V |
Supply Voltage (Min) | 3.15 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -40℃ ~ 125℃ |
The ISO7240CFDWR is a quad channel 25Mbps Digital Isolator with multiple channel configurations and output enable functions. This device has a logic input and output buffers separated by TI"s silicon dioxide isolation barrier. Used in conjunction with isolated power supplies, this isolator blocks high voltage, isolate grounds and prevent noise currents from entering the local ground and interfering with or damaging sensitive circuitry. The ISO7240 has all four channels in the same direction. The C option devices have TTL input thresholds and a noise-filter at the input that prevents transient pulses from being passed to the output of the device. The M option devices have CMOS VCC/2 input thresholds and do not have the input noise-filter or the additional propagation delay. The isolator has an input disable function on pin 7 and a selectable high or low failsafe-output function with the CTRL pin.
● 4kV ESD protected
● 1ns Maximum low channel-to-channel output skew
● 2ns Maximum low pulse-width distortion
● High electromagnetic immunity
● 1ns Typical Low jitter content
● Green product and no Sb/Br
●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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