| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 16 Pin |
| Supply Voltage (DC) | 3.30 V, 5.00 V |
| Case/Package | SOIC-16 |
| Rise/Fall Time | 2 ns |
| Supply Current | 13.0 mA |
| Number of Channels | 4 Channel |
| Number of Positions | 16 Position |
| Power Dissipation | 220 mW |
| Data Rate | 1.00 Mbps |
| Rise Time | 2 ns |
| Isolation Voltage | 4000 Vpk |
| Thermal Shutdown | No |
| Input Current (Min) | 10 μA |
| Maximum Forward Voltage (Max) | 5.5 V |
| Fall Time (Max) | 2 ns |
| Fall Time (Max) | 2 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 220 mW |
| Supply Voltage | 3.15V ~ 5.5V |
| Supply Voltage (Max) | 5.5 V |
| Supply Voltage (Min) | 3.15 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 10.5 mm |
| Size-Width | 7.6 mm |
| Operating Temperature | -40℃ ~ 125℃ |
The ISO7241ADW is a quad-channel Digital Isolator with multiple channel configurations and output enable functions. This device has logic input and output buffers separated by TI"s silicon dioxide (SiO2) isolation barrier. Used in conjunction with isolated power supplies, these devices block high voltage, isolate grounds and prevent noise currents from entering the local ground and interfering with or damaging sensitive circuitry. The ISO7241A has three channels the same direction and one channel in opposition. It has TTL input thresholds and a noise-filter at the input that prevents transient pulses from being passed to the output of the device. A periodic update pulse is sent across the barrier to ensure the proper dc level of the output. If this dc-refresh pulse is not received, the input is assumed to be unpowered or not being actively driven and the failsafe circuit drives the output to a logic high state.
● High electromagnetic immunity (EMI)
● 4000Vpeak Isolation
● 4kV ESD Protection
● Green product and no Sb/Br
●Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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