| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | DIP |
| Wavelength | 940 nm |
| Peak Wavelength | 940 nm |
| Power Dissipation | 100 mW |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Forward Current (Max) | 50 mA |
| Fall Time (Max) | 15000 ns |
| Fall Time (Max) | 15000 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -25 ℃ |
| Power Dissipation (Max) | 100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | -25℃ ~ 85℃ |
█ Descriptions
●The ITR9606 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black Thermoplastic
●Housing The phototransistor receives radiation from the IRED only .This is the normal Situation. But when an object is in between, phototransistor could not receives the radiation. For additional component information, please refer to IR928-6C and PT928-6C
●█ Features
●• Fast response time
●• High analytic
●• Cut-off visible wavelength λp=940nm
●• High sensitivity
●• Pb free
●• The product itself will remain within RoHS compliant version.
●█ Applications
●• Mouse Copier
●• Switch Scanner
●• Floppy disk driver
●• Non-contact Switching
●• For Direct Board
Everlight Electronics
7 Pages / 0.33 MByte
Everlight Electronics
8 Pages / 0.22 MByte
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