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IXBH12N300
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IXBH12N300 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 3000V 30A 160000mW 3Pin(3+Tab) TO-247AD
Documentation:IXBH12N300 Datasheet (5 Pages)
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IXBH12N300 Datasheet PDF (5 Pages)
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IXBH12N300 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation160 W
Breakdown Voltage (Collector to Emitter)3000 V
Reverse recovery time1.4 µs
Input Power (Max)160 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)160000 mW
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IXBH12N300 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length16.26 mm
Size-Width5.3 mm
Size-Height21.46 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXBH12N300 Documents

IXBH12N300 Datasheet
IXYS Semiconductor
5 Pages / 0.28 MByte
IXBH12N300 Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.17 MByte

IXBH12 Documents

IXBH12N300 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 3000V 30A 160000mW 3Pin(3+Tab) TO-247AD
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