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IXBH16N170
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IXBH16N170 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 1700V 40A 250000mW 3Pin(3+Tab) TO-247AD
Documentation:IXBH16N170 Datasheet (5 Pages)
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IXBH16N170 Datasheet PDF (5 Pages)
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IXBH16N170 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Voltage Rating (DC)1.70 kV
Current Rating16.0 A
Case/PackageTO-247-3
Power Dissipation250000 mW
Rise Time25.0 ns
Breakdown Voltage (Collector to Emitter)1700 V
Reverse recovery time1.32 µs
Input Power (Max)250 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)250000 mW
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IXBH16N170 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingBulk
Size-Width5.3 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXBH16N170 Documents

IXBH16N170 Datasheet
IXYS Semiconductor
5 Pages / 0.17 MByte
IXBH16N170 Other Datasheet PDF
IXYS Semiconductor
36 Pages / 0.78 MByte

IXBH16 Documents

IXBH16N170 Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 40A 250000mW 3Pin(3+Tab) TO-247AD
IXBH16N170A Datasheet PDF
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 16A 190000mW 3Pin(3+Tab) TO-247AD
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