| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Rating | 100 W |
| Power Dissipation | 100000 mW |
| Breakdown Voltage (Collector to Emitter) | 1600 V |
| Input Power (Max) | 100 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 100000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This IXBH9N160G IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 1600 V. Its maximum power dissipation is 100000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
IXYS Semiconductor
4 Pages / 0.07 MByte
IXYS Semiconductor
1 Pages / 0.6 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1600V 9A 100000mW 3Pin(3+Tab) TO-247AD
Littelfuse
Insulated Gate Bipolar Transistor,
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