| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Power Dissipation | 625000 mW |
| Breakdown Voltage (Collector to Emitter) | 3000 V |
| Reverse recovery time | 1.9 µs |
| Input Power (Max) | 625 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Width | 5.31 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimize the current at your gate with the IXBK55N300 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 3000 V. Its maximum power dissipation is 625000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
IXYS Semiconductor
7 Pages / 0.2 MByte
IXYS Semiconductor
7 Pages / 0.2 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 3000V 130A 625000mW 3Pin(3+Tab) TO-264
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