| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Power Dissipation | 1040000 mW |
| Breakdown Voltage (Collector to Emitter) | 1700 V |
| Reverse recovery time | 1.5 µs |
| Input Power (Max) | 1040 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1040000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.34 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimize the current at your gate with the IXBX75N170 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 1040000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
IXYS Semiconductor
5 Pages / 0.17 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1700V 200A 1040000mW 3Pin(3+Tab) PLUS 247
IXYS Semiconductor
Igbt 1700V 110A 1040W Plus247
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