| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Power Rating | 200 W |
| Power Dissipation | 200000 mW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 40 ns |
| Input Power (Max) | 200 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This powerful and secure IXDH20N120D1 IGBT transistor from Ixys Corporation will make sure your circuit works properly. Its maximum power dissipation is 200000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
IXYS Semiconductor
4 Pages / 0.08 MByte
IXYS Semiconductor
4 Pages / 0.07 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 38A 200000mW 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 38A 200000mW 3Pin(3+Tab) TO-247AD
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
