| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 200 W |
| Rise Time | 70.0 ns |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 200 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 200000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.34 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This powerful and secure IXDR30N120 IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 200000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
IXYS Semiconductor
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IXYS Semiconductor
8 Pages / 0.13 MByte
IXYS Semiconductor
IXYS SEMICONDUCTOR IXDR30N120D1 IGBT Single Transistor, Isolated, 50A, 2.4V, 200W, 1.2kV, TO-247AD, 3Pins
IXYS Semiconductor
IXYS SEMICONDUCTOR IXDR30N120 IGBT Single Transistor, Isolated, 50A, 2.4V, 200W, 1.2kV, TO-247AD, 3Pins
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