TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | ISOPLUSi5-Pak |
Power Dissipation | 380000 mW |
Breakdown Voltage (Collector to Emitter) | 4000 V |
Input Power (Max) | 380 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 380000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IXEL40N400 IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 380000 mW. It has a maximum collector emitter voltage of 4000 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -40 °C to 150 °C.
IXYS Semiconductor
5 Pages / 0.16 MByte
IXYS Semiconductor
Trans IGBT Chip N-CH 4000V 90A 380000mW 3Pin(3+Tab) ISOPLUS I5-PAK
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Trans IGBT Chip N-CH 4000V 90A 380000mW 3-Pin(3+Tab) ISOPLUS I5-PAK
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