| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 1.20 kV |
| Current Rating | 50.0 A |
| Case/Package | ISOPLUS-247 |
| Polarity | NPN |
| Power Dissipation | 200 W |
| Rise Time | 50.0 ns |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 80 ns |
| Input Power (Max) | 200 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
IGBT 1200V 50A 200W Through Hole ISOPLUS247™
IXYS Semiconductor
4 Pages / 0.07 MByte
IXYS Semiconductor
IGBT 1200V 50A 200W TO247
IXYS Semiconductor
Trans IGBT Chip N-CH 1.2kV 50A 3Pin(3+Tab) ISOPLUS 247
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