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IXFB30N120P
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IXFB30N120P Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Category:MOSFETs
Case Package:TO-264-3
Description:N-Channel 1200V 30A 350mΩ Through Hole PolarP HiPerFET Power Mosfet- PLUS-264
Documentation:IXFB30N120P Datasheet (6 Pages)
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IXFB30N120P Datasheet PDF (6 Pages)
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IXFB30N120P Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-264-3
Power Dissipation1.25 kW
Threshold Voltage6.5 V
Drain to Source Voltage (Vds)1200 V
Rise Time60 ns
Input Capacitance (Ciss)22500pF @25V(Vds)
Input Power (Max)1250 W
Fall Time56 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)1250W (Tc)
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IXFB30N120P Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length20.29 mm
Size-Width5.31 mm
Size-Height26.59 mm
Operating Temperature-55℃ ~ 150℃ (TJ)
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IXFB30N120P Documents

IXFB30N120P Datasheet
IXYS Semiconductor
6 Pages / 0.13 MByte
IXFB30N120P Other Datasheet PDF
IXYS Semiconductor
5 Pages / 0.13 MByte

IXFB30N120 Documents

IXFB30N120P Datasheet PDF
IXYS Semiconductor
N-Channel 1200V 30A 350mΩ Through Hole PolarP HiPerFET Power Mosfet- PLUS-264
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