| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Number of Channels | 1 Channel |
| Power Dissipation | 1250 W |
| Threshold Voltage | 6.5 V |
| Drain to Source Voltage (Vds) | 1000 V |
| Rise Time | 68 ns |
| Input Capacitance (Ciss) | 19000pF @25V(Vds) |
| Fall Time | 56 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1250W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Width | 5.31 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Compared to traditional transistors, IXFB44N100P power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1250000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
IXYS Semiconductor
5 Pages / 0.12 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte
IXYS Semiconductor
N-Channel 1000V 44A 220mΩ Through Hole PolarP2 HiPerFET Mosfet - PLUS-264
IXYS Semiconductor
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