TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.016 Ω |
Polarity | N-Channel |
Power Dissipation | 600 W |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 150 V |
Continuous Drain Current (Ids) | 120 A |
Rise Time | 42 ns |
Input Capacitance (Ciss) | 4900pF @25V(Vds) |
Fall Time | 26 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 600000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 16.26 mm |
Size-Width | 5.3 mm |
Size-Height | 21.46 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IXFH120N15P is a PolarHT™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density.
● Avalanche energy rating
● International standard packages
● Unclamped inductive switching (UIS) rating
● Low package inductance - Easy to drive and to protect
● Easy to mount
● Space saving
IXYS Semiconductor
5 Pages / 0.17 MByte
IXYS Semiconductor
1 Pages / 0.37 MByte
IXYS Semiconductor
Trans MOSFET N-CH 150V 120A 3Pin(3+Tab) TO-247AD
Littelfuse
Trans MOSFET N-CH 150V 120A 3-Pin(3+Tab) TO-247AD
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