| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.022 Ω |
| Polarity | N-Channel |
| Power Dissipation | 714 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 120 A |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 6000pF @25V(Vds) |
| Fall Time | 31 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 714000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IXFH120N20P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and low drain-to-tab capacitance. It is suitable for DC-to-DC converters, battery chargers, DC choppers and high speed power switching applications.
● International standard packages
● Avalanche rating
● Low Qg
● Low package inductance
● Easy to mount
● Space saving
IXYS Semiconductor
5 Pages / 0.18 MByte
IXYS Semiconductor
5 Pages / 0.12 MByte
IXYS Semiconductor
Trans MOSFET N-CH 200V 120A 3Pin(3+Tab) TO-247AD
Littelfuse
Trans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
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