TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 1.00 kV |
Current Rating | 12.0 A |
Case/Package | TO-247-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 1.05 Ω |
Polarity | N-Channel |
Power Dissipation | 300 W |
Threshold Voltage | 4.5 V |
Drain to Source Voltage (Vds) | 1 kV |
Continuous Drain Current (Ids) | 12.0 A |
Rise Time | 33 ns |
Input Capacitance (Ciss) | 4000pF @25V(Vds) |
Fall Time | 32 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH12N100 is a 1000V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low inductance offers easy to drive and protect
● Fast intrinsic rectifier
● Space-saving s
● High power density
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