| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-3-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.05 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 1 kV |
| Rise Time | 9.8 ns |
| Input Capacitance (Ciss) | 2700pF @25V(Vds) |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH12N100F is a 1000V N-channel Enhancement Mode Power MOSFET designed for laser driver, induction heating, switch mode power supplies and switching industrial applications.
● Double metal process for low gate resistance
● Rugged polysilicon gate cell structure
● Unclamped Inductive Switching (UIS) rated
● Low inductance offers easy to drive and protect
● Fast intrinsic rectifier
● Space-saving s
● High power density
IXYS Semiconductor
2 Pages / 0.1 MByte
IXYS Semiconductor
Single N-Channel 1000V 300W 155NC 12A Surface Mount Power Mosfet - TO-247AD
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFH12N100F Power MOSFET, N Channel, 12A, 1kV, 1.05Ω, 10V, 3V
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