| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 400 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 180 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 12.0 A |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 1870pF @25V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 180W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH12N50F is a N-channel Power MOSFET offers low package inductance hence easy to drive and to protect. It is designed for use with DC-to-DC converters, SMPS/RMPS, DC choppers, pulse generation, laser drivers and RF amplifier applications.
● RF capable MOSFET
● Enhancement-mode
● Double metal process for low gate resistance
● Rugged polysilicon gate cell structure
● Unclamped inductive switching rated
● High power density
IXYS Semiconductor
2 Pages / 0.1 MByte
IXYS Semiconductor
6 Pages / 0.19 MByte
IXYS Semiconductor
2 Pages / 0.29 MByte
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