TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.9 Ω |
Polarity | N-Channel |
Power Dissipation | 500 W |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 1 kV |
Continuous Drain Current (Ids) | 14.0 A |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 2700pF @25V(Vds) |
Fall Time | 12 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 500W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 16.26 mm |
Size-Width | 5.3 mm |
Size-Height | 21.46 mm |
Weight | 6.00 g |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH14N100Q2 is a Q2-class HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic rectifier.
● Double metal process for low gate resistance
● International standard package
● Avalanche energy and current rated
● UL94V-0 Flammability rating
● High dV/dt, low Qg and low trr
● Easy to mount
● Space savings
● High power density
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