| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 720 mΩ |
| Power Dissipation | 400 W |
| Threshold Voltage | 5.5 V |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Continuous Drain Current (Ids) | 14.0 A |
| Rise Time | 29 ns |
| Input Capacitance (Ciss) | 3900pF @25V(Vds) |
| Fall Time | 27 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 400W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Make an effective common gate amplifier using this IXFH14N80P power MOSFET from Ixys Corporation. Its maximum power dissipation is 400000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
IXYS Semiconductor
5 Pages / 0.22 MByte
IXYS Semiconductor
5 Pages / 0.22 MByte
IXYS Semiconductor
Trans MOSFET N-CH 800V 14A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Trans MOSFET N-CH 800V 14A 3Pin(3+Tab) TO-247AD
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