| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 16.0 A |
| Case/Package | TO-247-3 |
| Drain to Source Resistance (on) (Rds) | 400 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Input Capacitance | 2.25 nF |
| Gate Charge | 43.0 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 16.0 A |
| Rise Time | 25 ns |
| Input Capacitance (Ciss) | 2250pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Fall Time | 22 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Amplify electronic signals and switch between them with the help of Ixys Corporation"s IXFH16N50P power MOSFET. Its maximum power dissipation is 300000 mW. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
IXYS Semiconductor
4 Pages / 0.24 MByte
Littelfuse
Power Field-Effect Transistor,
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