| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 500 V |
| Current Rating | 21.0 A |
| Case/Package | TO-247-3 |
| Power Rating | 300 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.25 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 21.0 A |
| Rise Time | 33 ns |
| Input Capacitance (Ciss) | 4200pF @25V(Vds) |
| Input Power (Max) | 300 W |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH21N50 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and rugged polysilicon gate cell structure. It is suitable for DC-to-DC converters, synchronous rectification, DC choppers, switched-mode and resonant-mode power supplies.
● International standard packages
● Unclamped inductive switching (UIS) rating
● Low package inductance - Easy to drive and to protect
● Easy to mount with 1 screw (isolated mounting screw hole)
● High power surface-mount package
● High power density
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