TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | TO-247-3 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 4 mΩ |
Power Dissipation | 440 W |
Threshold Voltage | 2 V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Rise Time | 20 ns |
Input Capacitance (Ciss) | 8500pF @25V(Vds) |
Fall Time | 17 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 440W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
N-Channel 60V 220A (Tc) 440W (Tc) Through Hole TO-247
IXYS Semiconductor
6 Pages / 0.23 MByte
IXYS Semiconductor
Transistor: N-MOSFET; unipolar; 60V; 220A; 440W; TO247; 38ns
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