IXFH22N60P Datasheet PDF - IXYS Semiconductor

Manufacturer:	IXYS Semiconductor
Category:	MOSFETs
Case Package:	TO-247-3
Description:	Single N-Channel 600V 400W 58NC Through Hole Power Mosfet - TO-247
Documentation:	IXFH22N60P Datasheet (5 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IXFH22N60P Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Voltage Rating (DC)	600 V
Current Rating	22.0 A
Case/Package	TO-247-3
Drain to Source Resistance (on) (Rds)	350 mΩ
Polarity	N-Channel
Power Dissipation	400W (Tc)
Input Capacitance	3.60 nF
Gate Charge	58.0 nC
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Continuous Drain Current (Ids)	22.0 A
Rise Time	20 ns
Input Capacitance (Ciss)	3600pF @25V(Vds)
Input Power (Max)	400 W
Fall Time	23 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	400W (Tc)