| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 230 mΩ |
| Power Dissipation | 300 W |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Rise Time | 30 ns |
| Input Capacitance (Ciss) | 3900pF @25V(Vds) |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel Enhancement Mode Avalanche Rated, Low Qg ,High dv/dt
●Features
●IXYS advanced low Qg process
●International standard packages
●Low RDS (on)
●Unclamped Inductive Switching (UIS) rated
●Fast switching
●Molding epoxies meet UL 94 V-0 flammability classification
IXYS Semiconductor
4 Pages / 0.14 MByte
IXYS Semiconductor
4 Pages / 0.14 MByte
IXYS Semiconductor
Trans MOSFET N-CH 500V 24A 3Pin(3+Tab) TO-247AD
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