TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 26.0 A |
Case/Package | TO-247-3 |
Drain to Source Resistance (on) (Rds) | 270 mΩ |
Polarity | N-Channel |
Power Dissipation | 460W (Tc) |
Input Capacitance | 4.15 nF |
Gate Charge | 72.0 nC |
Drain to Source Voltage (Vds) | 600 V |
Breakdown Voltage (Drain to Source) | 600 V |
Continuous Drain Current (Ids) | 26.0 A |
Rise Time | 27 ns |
Input Capacitance (Ciss) | 4150pF @25V(Vds) |
Fall Time | 21 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 460W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 16.26 mm |
Size-Width | 5.3 mm |
Size-Height | 21.46 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
VDSS = 600 V
●ID25 = 26 A
●RDS(on) ≤ 270 mΩ
●trr ≤ 200 ns
●N-Channel Enhancement Mode
●Fast Recovery Diode
●Avalanche Rated
●Features
●Fast Recovery diode
●Unclamped Inductive Switching (UIS) rated
●International standard packages
●Low package inductance
● - easy to drive and to protect
●Advantages
●Easy to mount
●Space savings
●High power density
IXYS Semiconductor
5 Pages / 0.19 MByte
IXYS Semiconductor
6 Pages / 0.17 MByte
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