| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 26.0 A |
| Case/Package | TO-247-3 |
| Power Rating | 360 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.25 Ω |
| Polarity | N-Channel |
| Power Dissipation | 360 W |
| Threshold Voltage | 4.5 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 26.0 A |
| Rise Time | 32 ns |
| Input Capacitance (Ciss) | 5100pF @25V(Vds) |
| Input Power (Max) | 360 W |
| Fall Time | 16 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 360W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Width | 5.3 mm |
| Weight | 6 g |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH26N60Q is a Q-class HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic rectifier.
● Low gate charge
● International standard package
● UL94V-0 Flammability rating
● Low RDS (ON) HDMOS™ process
● Rugged polysilicon gate cell structure
● Avalanche energy and current rated
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
3 Pages / 0.1 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte
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