| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 300 V |
| Current Rating | 52.0 A |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.06 Ω |
| Polarity | N-Channel |
| Power Dissipation | 360 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 300 V |
| Breakdown Voltage (Drain to Source) | 300 V |
| Continuous Drain Current (Ids) | 52.0 A |
| Rise Time | 60 ns |
| Input Capacitance (Ciss) | 5300pF @25V(Vds) |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 360W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Weight | 6 g |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH52N30Q is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process, low gate charge and capacitances.
● Avalanche rating
● High dV/dt rating
● Low trr
● International standard packages
● Rugged polysilicon gate cell structure
● Easy to mount
● Space saving
● High power density
● UL94V-0 Flammability rating
IXYS Semiconductor
2 Pages / 0.07 MByte
IXYS Semiconductor
20 Pages / 2.6 MByte
IXYS Semiconductor
Trans MOSFET N-CH 300V 52A 3Pin(3+Tab) TO-247AD
IXYS Semiconductor
Single N-Channel 300V 400W 110NC Through Hole Power Mosfet - TO-247
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
